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Design of a 60 GHz 32% PAE Class-AB PA with 2nd Harmonic Control in 45-nm PD-SOI CMOS

Title data

Ciocoveanu, Radu ; Weigel, Robert ; Hagelauer, Amélie ; Issakov, Vadim:
Design of a 60 GHz 32% PAE Class-AB PA with 2nd Harmonic Control in 45-nm PD-SOI CMOS.
In: IEEE Transactions on Circuits and Systems 1: Regular Papers. Vol. 67 (April 2020) Issue 8 . - pp. 2635-2646.
ISSN 1558-0806
DOI: https://doi.org/10.1109/TCSI.2020.2984042

Official URL: Volltext

Abstract in another language

This paper presents a 60 GHz highly efficient singlestage differential stacked Class-AB power amplifier (PA) with second harmonic control (HC) for short range applications using mm-wave radar. The circuit is realized in a 45nm partially depleted sillicon-on-insulator (PD-SOI) CMOS technology. Measurement results show that the power amplifier achieves a saturated output power (P sat ) of 16.4dBm with a competitive maximum power-added efficiency (PAE max ) of 32% at 60 GHz. The output-referred 1-dB compression point (OP1dB) is 9.5 dBm. Furthermore, the circuit draws 40mA from a single 1.8V supply and the chip core size is 0.36mm ×0.35 mm.

Further data

Item Type: Article in a journal
Refereed: Yes
Keywords: Harmonic analysis; Transistors; Batteries; Power system harmonics; Radar cross-sections; CMOS technology
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Communication Electronics > Chair Communication Electronics - Univ.-Prof. Dr.-Ing. Amélie Marietta Hagelauer
Result of work at the UBT: No
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 19 Nov 2020 09:48
Last Modified: 19 Nov 2020 09:48
URI: https://eref.uni-bayreuth.de/id/eprint/57382