Titlebar

Export bibliographic data
Literature by the same author
plus on the publication server
plus at Google Scholar

 

CMOS RF Switch With Fast Discharge Feature

Title data

Solomko, Valentyn ; Oezdamar, Oguzhan ; Weigel, Robert ; Hagelauer, Amelie:
CMOS RF Switch With Fast Discharge Feature.
In: IEEE Solid-State Circuits Letters. Vol. 4 (17 February 2021) . - pp. 68-71.
ISSN 2573-9603
DOI: https://doi.org/10.1109/LSSC.2021.3059918

Official URL: Volltext

Abstract in another language

A radio-frequency (RF) switch featuring a circuit for fast discharge of the gate oxide capacitance is presented in this letter. Two auxiliary transistors are added between the gate and source/drain terminals of the main switch. They are brought into the ON state for a short time at the beginning of the switching transient, discharging the gate of the main transistor, and speeding up the switching process. An integrated circuit implementing the proposed concept based on a large shunt switch has been designed and fabricated in Infineon 130-nm bulk-CMOS RF-switch technology. The measurements have demonstrated improvement in switching time (defined as the time between the control signal trigger edge and 90% of the target RF amplitude) of above 50% with no penalty in RF performance comparing to the conventional switch without discharge feature. The measured OFF-state insertion loss and ON-state isolation at 824 MHz were 0.12 and 27.2 dB, respectively.

Further data

Item Type: Article in a journal
Refereed: Yes
Keywords: Antenna tuning; Cellular user equipment; Fast switching; Harmonics; High-voltage switch; Switching time acceleration; Switches; Switching circuits; Discharges (electric); Radio frequency; Logic gates; Transistors; Control systems
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Communication Electronics > Chair Communication Electronics - Univ.-Prof. Dr.-Ing. Amélie Marietta Hagelauer
Result of work at the UBT: No
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 26 Mar 2021 08:33
Last Modified: 26 Mar 2021 08:33
URI: https://eref.uni-bayreuth.de/id/eprint/64273