Titelangaben
Maier, Robert ; Bakran, Mark-M.:
SiC MOSFET switching – Lower losses without increased EMI : A technique to evaluate and achieve this goal.
In: The Journal of Engineering.
(2022)
Heft 1
.
- S. 76-85.
ISSN 2051-3305
DOI: https://doi.org/10.1049/tje2.12099
Angaben zu Projekten
Projekttitel: |
Offizieller Projekttitel Projekt-ID Open Access Publizieren Ohne Angabe |
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Abstract
With increasing switching speed of new power semiconductors like the SiC MOSFET, special attention has to be paid on the electromagnetic interference and its limitations. In this work, an evaluation criterion is developed as an optimisation tool for maximum exploitation of conducted electromagnetic interference limit by optimizing the switching process of a SiC MOSFET. The switching losses of power semiconductors can be reduced by increasing their switching speed. Unfortunately, at the same time, the electromagnetic interference will increase due to higher voltage and current slopes and higher switching oscillations. The electromagnetic interference caused by the switching process can be reduced by decreasing the switching speed. This also reduces the switching oscillation but inevitably increases the switching losses. The electromagnetic interference criterion developed in this paper will help to identify the proper switching speed for minimum losses under compliance with switching process related electromagnetic interference. It can be used to evaluate the benefit of more advanced gate control methods that allow increasing the switching speed without increasing the switching oscillation amplitude. The proposed method will not replace the final electromagnetic interference testing, but it will help determine the proper gate control method for lowest possible switching losses without violating the electromagnetic interference restrictions in an early development state. Measurements show that the switching losses can be reduced by 75% with a proper gate control method, where the proposed method assures the compliance with the electromagnetic interference limit.
Weitere Angaben
Publikationsform: | Artikel in einer Zeitschrift |
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Begutachteter Beitrag: | Ja |
Institutionen der Universität: | Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Mechatronik > Lehrstuhl Mechatronik - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profilfelder > Advanced Fields > Neue Materialien Profilfelder > Emerging Fields > Energieforschung und Energietechnologie Forschungseinrichtungen > Forschungsstellen > ZET - Zentrum für Energietechnik Fakultäten Fakultäten > Fakultät für Ingenieurwissenschaften Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Mechatronik Profilfelder Profilfelder > Advanced Fields Profilfelder > Emerging Fields Forschungseinrichtungen Forschungseinrichtungen > Forschungsstellen |
Titel an der UBT entstanden: | Ja |
Themengebiete aus DDC: | 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften |
Eingestellt am: | 24 Jun 2022 12:13 |
Letzte Änderung: | 03 Aug 2022 09:47 |
URI: | https://eref.uni-bayreuth.de/id/eprint/70151 |