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A Simulation Model for SiC MOSFET Switching Transients Controlled by an Adaptive Gate Driver with the Capability of Reducing Switching Losses and EMI across the Full Operating Range

Titelangaben

Li, Zheming ; Maier, Robert ; Bakran, Mark-M.:
A Simulation Model for SiC MOSFET Switching Transients Controlled by an Adaptive Gate Driver with the Capability of Reducing Switching Losses and EMI across the Full Operating Range.
2022
Veranstaltung: EPE 2022 ECCE Europe , 05.-09.09.2022 , Hannover.
(Veranstaltungsbeitrag: Kongress/Konferenz/Symposium/Tagung , Paper )

Abstract

In this paper, the performance of an intelligent-gate-driver-based self-regulating gate control approach,
which can reduce switching losses and EMI at SiC MOSFET turn-off and turn-on, is investigated by
simulation and verified by measurements. Firstly, a MOSFET behavior model is presented and confirmed
with double pulse measurement results of this approach. Based on this model, the performance
of this approach in continuous operation is evaluated and compared with measurement in continuous
operation. It is verified that there is a good match between measurement and simulation. The trade-off
between switching losses and EMI is improved significantly by the proposed gate control approach
compared to simple gate control with a single gate resistance.

Weitere Angaben

Publikationsform: Veranstaltungsbeitrag (Paper)
Begutachteter Beitrag: Ja
Institutionen der Universität: Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Mechatronik > Lehrstuhl Mechatronik - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profilfelder > Advanced Fields > Neue Materialien
Profilfelder > Emerging Fields > Energieforschung und Energietechnologie
Forschungseinrichtungen > Forschungsstellen > ZET - Zentrum für Energietechnik
Fakultäten
Fakultäten > Fakultät für Ingenieurwissenschaften
Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Mechatronik
Profilfelder
Profilfelder > Advanced Fields
Profilfelder > Emerging Fields
Forschungseinrichtungen
Forschungseinrichtungen > Forschungsstellen
Titel an der UBT entstanden: Ja
Themengebiete aus DDC: 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften
Eingestellt am: 23 Sep 2022 12:19
Letzte Änderung: 23 Sep 2022 12:19
URI: https://eref.uni-bayreuth.de/id/eprint/71956