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Frank, Michael ; Bakran, Mark-M.:
Effect of Dynamic Gate Control Driver on SiC MOSFET Power Module Performance in WLTC.
2023
Veranstaltung: 25th European Conference on Power Electronics and Applications (EPE 2023)
, 04.-08.09.2023
, Aalborg, Dänemark.
(Veranstaltungsbeitrag: Kongress/Konferenz/Symposium/Tagung
,
Paper
)
Abstract
This paper investigates the impact of dynamic
gate control on the total losses of a SiC MOSFET
power module under Worldwide Harmonized
Light Duty Test Cycle (WLTC) Class 3 operating
conditions. A time domain-based simulation
model is developed for the traction inverter of an
electric vehicle (EV) considering temperaturedependent
losses and thermal feedback for
enhanced accuracy. The study simulates the
WLTC using experimental measurement data,
allowing examination of various gate driver and
sensory configurations, as well as different power
module utilisation levels. It is found that due to
predominantly partial load conditions in WLTC,
the application of a dynamic gate driver can
significantly reduce losses - yielding savings
between 27 % and 47 % in switching losses and
17 % to 37 % in total inverter losses, depending
on the available sensory information, power
module utilisation, and gate driver design.
Weitere Angaben
| Publikationsform: | Veranstaltungsbeitrag (Paper) |
|---|---|
| Begutachteter Beitrag: | Ja |
| Institutionen der Universität: | Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Mechatronik > Lehrstuhl Mechatronik - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profilfelder > Advanced Fields > Neue Materialien Profilfelder > Emerging Fields > Energieforschung und Energietechnologie Forschungseinrichtungen > Forschungsstellen > Zentrum für Energietechnik - ZET |
| Titel an der UBT entstanden: | Ja |
| Themengebiete aus DDC: | 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften |
| Eingestellt am: | 10 Okt 2023 08:11 |
| Letzte Änderung: | 10 Okt 2023 08:11 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/87089 |