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Rauh, Michael ; Bürger, Matthias ; Bakran, Mark-M.:
Paralleling SiC-Power-MOSFET Body Diodes under Harsh Switching Conditions.
2024
Veranstaltung: PCIM Europe 2024
, 11.-13.06.2024
, Nürnberg.
(Veranstaltungsbeitrag: Kongress/Konferenz/Symposium/Tagung
,
Paper
)
Abstract
To reduce switching losses of SiC-Power-MOSFETs, one approach is to maximize the switching speed
by using dead-time optimization. However, if the driver fails to meet the required dead-time, the body
diode may be operated under avalanche conditions due to high switching stress. Since power modules
consist of numerous semiconductors operating in parallel, the energy distribution between the separate
devices during a possible avalanche event of the body diodes has to be taken into consideration, which
will be addressed in this paper. The main focus is the parallel operation of semiconductors with different
breakdown voltages under avalanche conditions due to high switching stress as well as the impact of the
inductive coupling among the parallel devices during avalanche operation.
Weitere Angaben
| Publikationsform: | Veranstaltungsbeitrag (Paper) |
|---|---|
| Begutachteter Beitrag: | Ja |
| Institutionen der Universität: | Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Mechatronik > Lehrstuhl Mechatronik - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profilfelder > Advanced Fields > Neue Materialien Profilfelder > Emerging Fields > Energieforschung und Energietechnologie Forschungseinrichtungen > Forschungsstellen > Zentrum für Energietechnik - ZET |
| Titel an der UBT entstanden: | Ja |
| Themengebiete aus DDC: | 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften |
| Eingestellt am: | 13 Sep 2024 07:55 |
| Letzte Änderung: | 13 Sep 2024 07:55 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/90399 |