bei Google ScholarTitelangaben
Gleißner, Michael ; Soller, Florian ; Bakran, Mark-M.:
Applicability of thermal impedance spectroscopy via gate voltage variation
for IGBTs and SiC MOSFETs.
2024
Veranstaltung: ECCE Europe 2024
, 02.09.-06.09.2024
, Darmstadt.
(Veranstaltungsbeitrag: Kongress/Konferenz/Symposium/Tagung
,
Paper
)
DOI: https://doi.org/10.1109/ECCEEurope62508.2024.10751962
Abstract
This article investigates which junction temperature swings arise from minimal sinusoidal superposition of the gate voltage in the on-state for IGBT and SiC MOSFET semiconductors. For this purpose, a simulation model is created based on extensive curve tracer measurements and validated by temperature measurements with different types of sensors in a laboratory experiment. The thermal impedance can be determined by temperature swings at different frequencies. Based on these findings, the feasibility of degradation detection during load cycles is investigated.
Weitere Angaben
| Publikationsform: | Veranstaltungsbeitrag (Paper) |
|---|---|
| Begutachteter Beitrag: | Ja |
| Keywords: | junction temperature; temperature measurement; semiconductor device measurements; impedance spectroscopy; degradation diagnosis |
| Institutionen der Universität: | Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Mechatronik > Lehrstuhl Mechatronik - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profilfelder > Advanced Fields > Neue Materialien Profilfelder > Emerging Fields > Energieforschung und Energietechnologie Forschungseinrichtungen > Forschungsstellen > Zentrum für Energietechnik - ZET |
| Titel an der UBT entstanden: | Ja |
| Themengebiete aus DDC: | 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften |
| Eingestellt am: | 22 Nov 2024 06:30 |
| Letzte Änderung: | 22 Nov 2024 06:30 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/91226 |