Modeling of the temperature-dependent On-State-Resistance of GaN-HEMTs considering self-heating during measurement

Titelangaben

Bäumler, Andreas ; Bakran, Mark-M.:
Modeling of the temperature-dependent On-State-Resistance of GaN-HEMTs considering self-heating during measurement.
2025
Veranstaltung: ECCE Europe 2025 , 31.08.25-04.09.2025 , Birmingham.
(Veranstaltungsbeitrag: Kongress/Konferenz/Symposium/Tagung , Paper )
DOI: https://doi.org/10.1109/ECCE-Europe62795.2025.11238443

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Abstract

Temperature Sensitive Electrical Parameters
(TSEPs) are becoming increasingly important for determining
the temperature of semiconductors. These parameters can be
measured during operation, allowing the temperature of the
semiconductor to be determined using a predefined model.
However, it is crucial to ensure the accuracy of the underlying
model. Consequently, self-heating during the measurements
employed to construct this model must be taken into account.
The present paper proposes an approach to consider self-heating
when determining the temperature-dependent drain-sourceresistance
of a GaN HEMT using output characteristics
measurements without the need of a given thermal impedance
model. The determined model is then used to illustrate the
importance of taking self-heating into account during TSEP
model-building, showing a discrepancy of up to 14 % between
the proposed drain-source-resistance model and one that does
not consider self-heating.
Index Terms—GaN HEMT, Drain-Source-On-Resistance, thermal
impedance, self-heating, TSEP.