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Modeling and Robustness of a 1.2 kV SiC JFET in Surge Current Events

Titelangaben

Ringelmann, Tim ; Bakran, Mark-M.:
Modeling and Robustness of a 1.2 kV SiC JFET in Surge Current Events.
2025
Veranstaltung: ECCE Europe 2025 , 31.08.25-04.09.2025 , Birmingham.
(Veranstaltungsbeitrag: Kongress/Konferenz/Symposium/Tagung , Paper )
DOI: https://doi.org/10.1109/ECCE-Europe62795.2025.11238389

Abstract

An alternative automotive inverter topology employs
a mixed half bridge (HB) configuration consisting of a silicon
carbide (SiC) junction field-effect transistor (JFET) and a SiC
metal-oxide semiconductor field-effect transistor (MOSFET). A
key advantage of this topology is its inherent ability to enter a safe
operating mode – the active short circuit (ASC) – when employed
in automotive inverters in conjunction with a permanent magnet
synchronous motor (PMSM). ASC events are characterized by
significant variability in current amplitude, electrical frequency,
and semiconductor junction temperature. To ensure inverter
robustness under such conditions, extensive testing across a wide
range of operating states is essential. To reduce this enormous
measurement effort, a numerical simulation model of the JFET
based on its static characteristics is presented. The model is
validated using half-sinusoidal surge current pulses at varying
starting temperatures and electrical frequencies. Finally, the
robustness of the semiconductor is evaluated as a function of
the pulse duration during half-sinusoidal surge current events.
Index Terms—JFET, simulation, surge current, SiC.

Weitere Angaben

Publikationsform: Veranstaltungsbeitrag (Paper)
Begutachteter Beitrag: Ja
Institutionen der Universität: Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Mechatronik > Lehrstuhl Mechatronik - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profilfelder > Advanced Fields > Neue Materialien
Profilfelder > Emerging Fields > Energieforschung und Energietechnologie
Forschungseinrichtungen > Forschungsstellen > Zentrum für Energietechnik - ZET
Titel an der UBT entstanden: Ja
Themengebiete aus DDC: 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften
Eingestellt am: 29 Jan 2026 08:55
Letzte Änderung: 29 Jan 2026 08:55
URI: https://eref.uni-bayreuth.de/id/eprint/95905