Electrical and optical properties of ZnO films deposited by ECR-PECVD

Titelangaben

Choi, S. Y. ; Kang, Myung-Jin ; Park, T. J. ; Tap, Roland ; Schoemaker, Stefan ; Willert-Porada, Monika:
Electrical and optical properties of ZnO films deposited by ECR-PECVD.
In: Physica Status Solidi A. Bd. 203 (2006) Heft 10 . - R73-R75.
ISSN 1521-396X
DOI: https://doi.org/10.1002/pssa.200622256

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Abstract

The effect of bias voltage on characteristics of ZnO thin films deposited by the electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) method was investigated. The structural, optical and electrical properties of ZnO thin films were studied as a function of O2/dielthylzinc ratio and applied bias voltage. Applying –600 V bias voltage on the substrate during deposition can reduce the sheet resistance by a magnitude of 104 without deteriorating the optical transmittance. The optical band gap was increased from 3.36 to 3.54 eV with bias voltage increase. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)