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Electrical and optical properties of ZnO films deposited by ECR-PECVD

Title data

Choi, S. Y. ; Kang, Myung-Jin ; Park, T. J. ; Tap, Roland ; Schoemaker, Stefan ; Willert-Porada, Monika:
Electrical and optical properties of ZnO films deposited by ECR-PECVD.
In: Physica Status Solidi A. Vol. 203 (2006) Issue 10 . - R73-R75.
ISSN 1521-396X
DOI: https://doi.org/10.1002/pssa.200622256

Official URL: Volltext

Abstract in another language

The effect of bias voltage on characteristics of ZnO thin films deposited by the electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) method was investigated. The structural, optical and electrical properties of ZnO thin films were studied as a function of O2/dielthylzinc ratio and applied bias voltage. Applying –600 V bias voltage on the substrate during deposition can reduce the sheet resistance by a magnitude of 104 without deteriorating the optical transmittance. The optical band gap was increased from 3.36 to 3.54 eV with bias voltage increase. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Further data

Item Type: Article in a journal
Refereed: Yes
Keywords: 61.10.Nz; 73.61.Ga; 78.40.Fy; 81.15.Gh
Institutions of the University: Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Former Professors > Chair Electrochemical Process Engineering - Univ.-Prof. Dr. Monika Willert-Porada
Faculties
Faculties > Faculty of Engineering Science > Former Professors
Result of work at the UBT: Yes
DDC Subjects: 500 Science > 500 Natural sciences
600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 21 Jun 2017 09:56
Last Modified: 30 Aug 2022 10:47
URI: https://eref.uni-bayreuth.de/id/eprint/13101