at Google ScholarTitle data
Horff, Roman ; März, Andreas ; Lechler, M. ; Bakran, Mark-M.:
Optimised switching of a SiC MOSFET in a VSI using the body diode and additional Schottky barrier diode.
2015
Event: EPE'15 ECCE Europe 17th European Conference on Power Electronics and Applications
, 08.-10.09.2015
, Genf, Schweiz.
(Conference item: Conference
,
Paper
)
Abstract in another language
In this paper the switching behaviour of SiC MOSFETs is regarded with respect to the influence of the free-wheeling diode. A double pulse test was performed using two silicon carbide Schottky barrier diodes (SBD) of different rated currents and the intrinsic body diode of a silicon carbide MOSFET. The switching losses of these three combinations are analysed to find the best combination of MOSFET and antiparallel diode for the application in a voltage source inverter (VSI). The body diode was found to dissipate not negligible switching losses. The effect of a silicon carbide Schottky barrier diode in high current SiC power modules is shown. Calculating the power capability, it is shown that the MOSFET inverter without SBD has the higher power density.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 16 Dec 2015 08:23 |
| Last Modified: | 27 Jun 2024 12:50 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/28978 |