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Benchmarking of SiC JFET and SiC MOSFET Modules for the Application in Medium Power Traction Converters

Title data

März, Andreas ; Horff, Roman ; Bertelshofer, Teresa ; Bakran, Mark-M. ; Helsper, Martin:
Benchmarking of SiC JFET and SiC MOSFET Modules for the Application in Medium Power Traction Converters.
2016
Event: PCIM Europe 2016 , 10.-12.05.2016 , Nürnberg.
(Conference item: Conference , Speech )

Abstract in another language

In this paper the behaviour of a SiC JFET power module is being analysed and the impact of its bodydiode behaviour on the performance of the SiC JFET is compared to a SiC MOSFET and a state of the art IGBT. Second it will be discussed how a low inductance DC-Link affect the dynamic losses of the JFET and whether the SiC JFET can benefit from a low inductance setup.

Further data

Item Type: Conference item (Speech)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Faculties
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Mechatronics
Profile Fields
Profile Fields > Advanced Fields
Profile Fields > Emerging Fields
Research Institutions
Research Institutions > Research Units
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 19 May 2016 09:59
Last Modified: 09 Jan 2023 12:41
URI: https://eref.uni-bayreuth.de/id/eprint/32400