Title data
Bertelshofer, Teresa ; Horff, Roman ; März, Andreas ; Bakran, Mark-M.:
A Performance Comparison of a 650 V Si IGBT and SiC MOSFET Inverter under Automotive Conditions.
2016
Event: PCIM Europe 2016
, 10.-12.05.2016
, Nürnberg.
(Conference item: Conference
,
Speech
)
Abstract in another language
This paper researches the performance benefits of replacing the Si IGBTs and Si PIN-diodes of a 650 V/ 100 kW 3-phase power module for automotive drives with SiC MOSFETs. For this purpose the maximum current density of the devices and their losses during a load cycle are evaluated. It will be shown, how much the chip area and the power losses, especially under partial load, can be reduced by substituting the Si power semiconductors with the SiC MOSFETs.
Further data
Item Type: | Conference item (Speech) |
---|---|
Refereed: | Yes |
Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > ZET - Zentrum für Energietechnik Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
Result of work at the UBT: | Yes |
DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
Date Deposited: | 19 May 2016 10:03 |
Last Modified: | 09 Jan 2023 12:40 |
URI: | https://eref.uni-bayreuth.de/id/eprint/32402 |