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Bulk Silicon Crystals with the High Boron Content, Si₁₋ₓBₓ : Two Semiconductors Form an Unusual Metal

Title data

Ovsyannikov, Sergey V. ; Gou, Huiyang ; Karkin, Alexander E. ; Shchennikov, Vladimir V. ; Wirth, Richard ; Dmitriev, Vladimir ; Nakajima, Yoichi ; Dubrovinskaia, Natalia ; Dubrovinsky, Leonid:
Bulk Silicon Crystals with the High Boron Content, Si₁₋ₓBₓ : Two Semiconductors Form an Unusual Metal.
In: Chemistry of Materials. Vol. 26 (2014) Issue 18 . - pp. 5274-5281.
ISSN 1520-5002
DOI: https://doi.org/10.1021/cm502083v

Official URL: Volltext

Further data

Item Type: Article in a journal
Refereed: Yes
Institutions of the University: Research Institutions > Research Centres > Bavarian Research Institute of Experimental Geochemistry and Geophysics - BGI
Research Institutions
Research Institutions > Research Centres
Faculties > Faculty of Mathematics, Physics und Computer Science > Group Material Sciences > Professor Materials Physics and Technology at Extreme Conditions > Professor Materials Physics and Technology at Extreme Conditions - Univ.-Prof. Dr. Natalia Doubrovinckaia
Faculties
Faculties > Faculty of Mathematics, Physics und Computer Science
Faculties > Faculty of Mathematics, Physics und Computer Science > Group Material Sciences
Faculties > Faculty of Mathematics, Physics und Computer Science > Group Material Sciences > Professor Materials Physics and Technology at Extreme Conditions
Result of work at the UBT: Yes
DDC Subjects: 500 Science > 550 Earth sciences, geology
Date Deposited: 19 Aug 2016 07:35
Last Modified: 07 Dec 2022 11:37
URI: https://eref.uni-bayreuth.de/id/eprint/34183