at Google ScholarTitle data
Horff, Roman ; Bertelshofer, Teresa ; März, Andreas ; Bakran, Mark-M.:
Current mismatch in paralleled phases of high power SiC modules due to threshold voltage unsymmetry and different gate-driver concepts.
2016
Event: EPE 2016 ECCE Europe 18th European Conference on Power Electronics and Applications
, 5.-9.9.2016
, Karlsruhe.
(Conference item: Conference
,
Paper
)
DOI: https://doi.org/10.1109/EPE.2016.7695409
Abstract in another language
This paper analyzes the influence of the threshold voltage on the parallel connection of three phases of a high power SiC MOSFET module. The current mismatch and the resulting switching loss distribution between paralleled phases will be investigated. Two different gate-drive circuit concepts will be tested. The influence of the choice of the gate-resistor arrangement will be presented regarding the dynamic current distribution and switching losses.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > Zentrum für Energietechnik - ZET Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 11 Nov 2016 06:27 |
| Last Modified: | 27 Jun 2024 13:21 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/35109 |