at Google ScholarTitle data
März, Andreas ; Bertelshofer, Teresa ; Bakran, Mark-M.:
A novel gate drive concept to eliminate Parasitic Turn-on of SiC MOSFETs in low inductance power modules.
2017
Event: PCIM Europe 2017
, 16.-18.05.2017
, Nürnberg, Deutschland.
(Conference item: Conference
,
Paper
)
Abstract in another language
In this paper a new gate drive concept for low inductance SiC MOSFET power modules is presented. Experimental results show that the posed 3-level turn-off strategy will prevent parasitic turn-on (PTO) under fast switching operation. This will significantly reduce turn-on and reverse turn-off losses of SiC MOSFEts as well as reduce the overvoltage of the bodydiode at turn-off.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics Faculties Faculties > Faculty of Engineering Science |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 26 Sep 2017 06:18 |
| Last Modified: | 09 Jan 2023 12:43 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/39747 |