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A novel gate drive concept to eliminate Parasitic Turn-on of SiC MOSFETs in low inductance power modules

Title data

März, Andreas ; Bertelshofer, Teresa ; Bakran, Mark-M.:
A novel gate drive concept to eliminate Parasitic Turn-on of SiC MOSFETs in low inductance power modules.
2017
Event: PCIM Europe 2017 , 16.-18.05.2017 , Nürnberg, Deutschland.
(Conference item: Conference , Paper )

Abstract in another language

In this paper a new gate drive concept for low inductance SiC MOSFET power modules is presented. Experimental results show that the posed 3-level turn-off strategy will prevent parasitic turn-on (PTO) under fast switching operation. This will significantly reduce turn-on and reverse turn-off losses of SiC MOSFEts as well as reduce the overvoltage of the bodydiode at turn-off.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics
Faculties
Faculties > Faculty of Engineering Science
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 26 Sep 2017 06:18
Last Modified: 09 Jan 2023 12:43
URI: https://eref.uni-bayreuth.de/id/eprint/39747