at Google ScholarTitle data
Hofstetter, Patrick ; Bakran, Mark-M.:
Comparison of the Surge Current Ruggedness between the Body
Diode of SiC MOSFETs and Si Diodes for IGBT.
2018
Event: CIPS 2018
, 20.03.-22.03.2018
, Stuttgart.
(Conference item: Conference
,
Paper
)
Abstract in another language
The aim of this paper is to derive a statement, whether body diodes of future SiC MOSFETs will achieve similar I2t values
as freewheeling diodes currently used in IGBT modules. In the first part, a short experimental study will be shown, where two 1200V SiC MOSFETs of different manufacturers are surge current tested under different conditions, like different surge current durations, temperatures, Vgs voltages and multiple stresses. The second part deals with the scaling of the measurements to the surge current capability of typical IGBT modules for traction converters.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > ZET - Zentrum für Energietechnik Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 13 Nov 2018 08:19 |
| Last Modified: | 13 Nov 2018 08:19 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/46295 |