at Google ScholarTitle data
Hohmann, Fabian ; Bakran, Mark-M.:
Surge Current Simulation in a Half Bridge using a Thermal Model.
2018
Event: EPE 2018 : 20th European Conference on Power Electronics and Applications
, 17.09.-21.09.2018
, Riga, Lettland.
(Conference item: Conference
,
Paper
)
Abstract in another language
In this paper an IGBT half bridge with an antiparallel press-pack diode is examined for MMC use. Stateof-
the-art half bridges use a bypass thyristor in order to protect the lower diode during a DC-short. This
paper investigates prediction methods to calculate the stress of diode 2. Furthermore, it deals with the
possibility to substitute the bypass thyristor with a press-pack diode (PP-diode) to enhance to use of the
equipped semiconductor area.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > Zentrum für Energietechnik - ZET Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 13 Nov 2018 08:34 |
| Last Modified: | 10 Jul 2024 08:25 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/46298 |