at Google ScholarTitle data
Hofstetter, Patrick ; Hain, Stefan ; Bakran, Mark-M.:
Applying the 2D-Short Circuit Detection Method to SiC MOSFETs including an advanced Soft Turn Off.
2018
Event: PCIM Europe 2018
, 05.06.-07.06.2018
, Nürnberg, Deutschland.
(Conference item: Conference
,
Paper
)
Abstract in another language
To address the problem of small short circuit withstand
times of SiC MOSFETs, this paper presents a
short circuit protection, which detects the fault close
to the earliest time possible and turns off the device
safely. For the detection, the 2D-short circuit detection
method [1, 2] was adapted to SiC MOSFETs.
As SiC MOSFETs have to be turned off softly, a
turn-off strategy is shown which is able to turn the
device off during a short circuit type 1 and a short
circuit type 2 in an optimized way.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > ZET - Zentrum für Energietechnik Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 13 Nov 2018 09:58 |
| Last Modified: | 09 Jan 2023 12:21 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/46307 |