at Google ScholarTitle data
März, Andreas ; Bertelshofer, Teresa ; Bakran, Mark-M.:
High dynamic stress on SiC trench MOSFET body diodes and their behaviour.
2018
Event: PCIM Europe 2018
, 05.06.-07.06.2018
, Nürnberg.
(Conference item: Conference
,
Paper
)
Abstract in another language
In this paper state-of-the-art SiC trench MOSFET’s
body diodes are investigated under high dynamic
stress during reverse-recovery and in parallel configuration
of a power module. Measurements on
SiC MOSFET body diodes under high dynamic
stress show the effect of a clamping of the drainsource-
voltage together with a generation of additional
charge carriers at turn-off. This paper
analyses the cause of this effect and its dependence
on switching speed and commutation
inductance.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > ZET - Zentrum für Energietechnik Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 14 Nov 2018 08:07 |
| Last Modified: | 09 Jan 2023 12:46 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/46311 |