at Google ScholarTitle data
Bertelshofer, Teresa ; März, Andreas ; Bakran, Mark-M.:
Modelling parallel SiC MOSFETs : thermal selfstabilisation vs. switching imbalances.
In: IET Power Electronics.
Vol. 12
(2019)
Issue 5
.
- pp. 1071-1078.
ISSN 1755-4535
DOI: https://doi.org/10.1049/iet-pel.2018.5418
Abstract in another language
This article presents a numerical method in combination with a device simulation model used to analyse the parallel
connection of several silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) dies. Parallel connection is necessary to achieve the desired current carrying capability of the main inverters for xEV-drives. With this method, the effect of asymmetries within the chips’ parameters, especially the gate threshold voltage, is investigated. The investigation results quantify to what extent the positive temperature coefficient of the on-state resistance can mitigate the overheating of one chip
caused by switching loss imbalance. The results are used to define the necessary derating of the inverter output power so that no single chip is thermally overstressed.
Further data
| Item Type: | Article in a journal |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > ZET - Zentrum für Energietechnik Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 13 Jun 2019 07:14 |
| Last Modified: | 09 Jan 2023 12:48 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/49483 |