at Google ScholarTitle data
Kestler, Tobias ; Bakran, Mark-M.:
Expansion of the Junction Temperature Measurement via the Internal Gate Resistance to a wide range of Power Semiconductors.
2019
Event: 21th European Conference on Power Electronics and Applications
, 02.09.-06.09.2019
, Genua.
(Conference item: Conference
,
Paper
)
Abstract in another language
The temperature dependent internal gate resistance Rgi of MOS devices is suitable for online Tj acquisition in operating application circuits. Recent publications have shown various measurement approaches and tested them for specific DUTs. In this work the issues arising when applying the Rgi-method to DUTs with a low Rgi and to SiC MOSFETs are described. If a device exhibits a low Rgi the measurement error due to parasitic resistance becomes relevant. For SiC MOSFETs frequency dependent effects, which can presumably be attributed to charge trapping at the gate oxide, have a significant influence on the measured data.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > ZET - Zentrum für Energietechnik Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 30 Sep 2019 09:54 |
| Last Modified: | 30 Sep 2019 09:54 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/52497 |