at Google ScholarTitle data
Ciocoveanu, Radu ; Weigel, Robert ; Hagelauer, Amelie ; Issakov, Vadim:
A Low Insertion-Loss 10-110 GHz Digitally Tunable SPST Switch in 22 nm FD-SOI CMOS.
In:
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium : Proceedings. -
San Diego, USA
,
2018
ISBN 978-1-5386-6502-2
DOI: https://doi.org/10.1109/BCICTS.2018.8550908
Abstract in another language
This paper presents a wideband digitally tunable SPST switch based on the travelling-wave concept that has been realized in a 22 nm FD-SOI CMOS technology. The digital control for return loss is performed through mutual inductance switching. Small-signal measurement results show that the proposed SPST switch achieves a bandwidth of 10-110 GHz, with an insertion loss of 1.2 dB at 60 GHz and a 24 dB isolation at 60 GHz, whereas large-signal measurements show a 1-dB compression point of +7 dBm at 24 GHz. Furthermore, the 3 digital control bits allow tuning return loss center frequency by approximately 7 GHz. The chip core size is 0.12 mm x 0.15 mm
Further data
| Item Type: | Article in a book |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Former Professors > Chair Communication Electronics - Univ.-Prof. Dr.-Ing. Amélie Marietta Hagelauer Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Communication Electronics Faculties > Faculty of Engineering Science > Former Professors |
| Result of work at the UBT: | No |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 18 Oct 2019 06:58 |
| Last Modified: | 14 Jul 2020 11:31 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/52543 |