at Google ScholarTitle data
Ciocoveanu, Radu ; Weigel, Robert ; Hagelauer, Amelie ; Geiselbrechtinger, Angelika ; Issakov, Vadim:
5G mm-Wave Stacked Class AB Power Amplifier in 45 nm PD-SOI CMOS.
In:
Asia-Pacific Microwave Conference : Proceedings. -
Kyoto, Japan
,
2018
. - pp. 147-149
ISBN 978-4-9023-3945-1
DOI: https://doi.org/10.23919/APMC.2018.8617378
Abstract in another language
This paper presents a single-stage stacked Class AB power amplifier (PA) with lower complexity for fifth generation (5G) K/Ka band front-ends that has been realized in a 45nm PDSOI CMOS technology. Measurement results show that the power amplifier achieves a saturated output power (Psat) of 17.3 dBm with a 39.7 maximum power-added efficiency (PAEmax) at 24 GHz. The output-referred 1-dB compression point (OP1dB) is 14.3dBm and the saturated output power varies from 15.9dBm to 17.3dBm for a frequency range from 22 GHz to 28 GHz. Furthermore, the circuit draws 40mA from a 2.9V supply and the chip core size is 0.35mm x 0.25 mm.
Further data
| Item Type: | Article in a book |
|---|---|
| Refereed: | Yes |
| Keywords: | Stacked PA; 45nm PD-SOI; 5G; High Power; High Efficiency |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Former Professors > Chair Communication Electronics - Univ.-Prof. Dr.-Ing. Amélie Marietta Hagelauer Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Communication Electronics Faculties > Faculty of Engineering Science > Former Professors |
| Result of work at the UBT: | No |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 18 Oct 2019 07:04 |
| Last Modified: | 14 Jul 2020 11:22 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/52546 |