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Circuits with Scaled Metal Oxide Technology for Future TOLAE RF Systems

Title data

Schrüfer, Daniel ; Ellinger, Martin ; Jank, Michael ; Frey, Lothar ; Weigel, Robert ; Hagelauer, Amelie:
Circuits with Scaled Metal Oxide Technology for Future TOLAE RF Systems.
In: European Microwave Conference : Workshop. - Madrid, Spain , 2018 . - pp. 737-740
ISBN 978-2-87487-051-4

Abstract in another language

A novel architecture for thin-film transistors (TFT) utilising the concept of combining a staggered and a coplanar electrode in a single Alternating Contact TFT (ACTFT) is presented. It exhibits a transit frequency of 49.2MHz for a channel length of 0.6 μm at a drain and gate voltage of 2V. Based on these ACTFTs various n-channel-only digital circuits were fabricated and are presented here.

Further data

Item Type: Article in a book
Refereed: Yes
Keywords: Thin film devices; thin film circuits; logic circuits; logic gates;
Institutions of the University: Faculties > Faculty of Engineering Science > Former Professors > Chair Communication Electronics - Univ.-Prof. Dr.-Ing. Amélie Marietta Hagelauer
Faculties
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Communication Electronics
Faculties > Faculty of Engineering Science > Former Professors
Result of work at the UBT: No
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 18 Oct 2019 07:36
Last Modified: 14 Jul 2020 11:26
URI: https://eref.uni-bayreuth.de/id/eprint/52547