at Google ScholarTitle data
Hohmann, Fabian ; Bakran, Mark-M.:
Applying a 3300V SiC Half-bridge to an MMC Based HVDC System.
2019
Event: 21th European Conference on Power Electronics and Applications, Genua
, 02.09.-06.09.2019
, Genua.
(Conference item: Conference
,
Paper
)
Abstract in another language
A 3.3 kV silicon carbide (SiC) MOSFET is analyzed for the use in a modular multilevel converter (MMC). A laboratory-setup of a submodule is built to characterize the switching behavior. The total losses are calculated for the MMC operation. A comparison to a silicon (Si) based IGBT model is made based on losses and the necessary semiconductor area.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > ZET - Zentrum für Energietechnik Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 17 Oct 2019 09:00 |
| Last Modified: | 17 Oct 2019 09:00 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/52778 |