at Google ScholarTitle data
März, Andreas ; Bertelshofer, Teresa ; Helsper, Martin ; Bakran, Mark-M.:
Comparison of IGBT and SiC MOSFET in resonant application.
2018
Event: EPE 2018 : 20th European Conference on Power Electronics and Applications
, 17.09.-21.09.2018
, Riga, Lettland.
(Conference item: Conference
,
Paper
)
Abstract in another language
In this paper the main advantages of SiC MOSFETs compared to IGBTs in soft-switching converters are discussed. Experimental results show the difference in conduction losses between MOSFETs and IGBTs as well as switching losses under ZVC and ZCS condition on the basis of a high efficient DCDC-converter design.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > Zentrum für Energietechnik - ZET Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 11 Feb 2020 07:56 |
| Last Modified: | 10 Jul 2024 08:29 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/54320 |