Active clamping method for SiC MOSFET high power modules : Benefits and Limits

Title data

Maier, Robert ; Bakran, Mark-M.:
Active clamping method for SiC MOSFET high power modules : Benefits and Limits.
In: 2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe). - Piscataway, NJ : IEEE , 2020 . - pp. 1-10
ISBN 978-9-0758-1536-8
DOI: https://doi.org/10.23919/EPE20ECCEEurope43536.2020.9215899

Official URL:

Abstract in another language

For high power applications, the SiC MOSFET switching speed is limited by the inductive overvoltage
due to the high product of stray inductance and switched current [1]. The active clamping method properly
designed for high power applications, allows the increase of the du=dt during the turn-off process
without exceeding the MOSFET maximum blocking voltage. This paper investigates the active clamping
method via scaled single chip measurements. This scheme includes scaling accordingly the commutation
circuit stray inductance and the active clamping path, emulating the full module switching behavior with
single chip measurements. In comparison to simple gate resistor controlled switching, the active clamping
method allows a higher voltage gradient during the switching process while effectively limiting the
overvoltage. Results show, that losses could be reduced in the range by 30% (for high current) and up
to 70% (for low current). However, special focus has to be placed on the thermal design of the active
clamping circuit. The temperature dependent breakthrough voltage of the transient voltage suppression
diodes has to be considered for the correct implementation of the active clamping circuit.

Further data

Item Type:	Article in a book
Refereed:	No
Institutions of the University:	Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Affiliated Institutes > TechnologieAllianzOberfranken (TAO) Faculties Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Affiliated Institutes
Result of work at the UBT:	Yes
DDC Subjects:	600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited:	19 Oct 2020 05:48
Last Modified:	10 Jul 2024 08:40
URI:	https://eref.uni-bayreuth.de/id/eprint/57256