Title data
Solomko, Valentyn ; Oezdamar, Oguzhan ; Wang, Kun ; Pfuhl, Nadine ; Thomas, Anthony ; Weigel, Robert ; Hagelauer, Amelie:
Antenna Aperture Tuning with High-Voltage Bulk-CMOS Switch-Based RF Capacitor.
In:
Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference (APMC). -
Piscataway, NJ
: IEEE
,
2019
. - pp. 1464-1466
ISBN 978-1-72813-518-2
DOI: https://doi.org/10.1109/APMC46564.2019.9038800
Abstract in another language
A circuit for tuning the aperture of inverted-F antenna (IFA) utilizing a high-voltage RF-switch-based digitally-tunable capacitor in bulk-CMOS technology is demonstrated. The tuning network consists of the 5-bit switchable capacitor and a parallel inductor which are placed at the high-voltage plane of the radiating element with peak RF voltages of 60 V applied across the circuit. The antenna covers low and middle cellular frequency bands with fine tuning steps, providing return loss at the feed point of above 6 dB for more than 90% of the target frequency range. The measured peak reflected second and third harmonics generated by the tuned antenna when driven by the 34 dBm low-band RF signal are -38 dBm and -56 dBm respectively.
Further data
Item Type: | Article in a book |
---|---|
Refereed: | Yes |
Keywords: | Capacitors; Switches; Radio frequency; Tuning; Antenna; Measurement; Feeds; Apertures |
Institutions of the University: | Faculties > Faculty of Engineering Science > Former Professors > Chair Communication Electronics - Univ.-Prof. Dr.-Ing. Amélie Marietta Hagelauer Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Communication Electronics Faculties > Faculty of Engineering Science > Former Professors |
Result of work at the UBT: | No |
DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
Date Deposited: | 19 Nov 2020 08:21 |
Last Modified: | 17 Oct 2022 11:22 |
URI: | https://eref.uni-bayreuth.de/id/eprint/57360 |