at Google ScholarTitle data
Bergmann, Lukas ; Wahle, Marcus ; Bakran, Mark-M.:
Challenges of paralleling 3.3 kV SiC MOSFET modules in HVDC converter submodules.
2022
Event: PCIM Europe 2022
, 10.05.-12.05.2022
, Nürnberg.
(Conference item: Conference
,
Paper
)
Abstract in another language
This work presents the challenges of paralleling 3300 V Silicon carbide MOSFET power modules. Based on a static device characterization, the static current derating depending on conduction variation and parallel number of modules is calculated. Furthermore, an investigation on dynamic imbalance of switching losses due to device parameter variation is realized based on a parametrized simulation model. Finally, a comparison of three different approaches of external module gate loop designs is presented to find the best solution.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > ZET - Zentrum für Energietechnik Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 29 Jul 2022 06:51 |
| Last Modified: | 29 Jul 2022 06:54 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/71261 |