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Characterization of the Static and Dynamic Behavior of a 1.2kV SiC JFET in Reverse Conduction

Title data

Ringelmann, Tim ; Bakran, Mark-M.:
Characterization of the Static and Dynamic Behavior of a 1.2kV SiC JFET in Reverse Conduction.
Event: PCIM Europe 2023 , 09.05.-11.05.2023 , Nürnberg.
(Conference item: Conference , Paper )

Abstract in another language

To reduce conduction losses, SiC JFETs as alternative semiconductors to the state-of-the-art SiC
MOSFETs are promising for automotive inverter applications. For those applications, reverse conduction
of semiconductors is essential. The manufacturer does not typically describe the reverse conduction
of normally-on JFETs without cascode, that is why this publication deals with it for a normally-on 1.2 kV
SiC JFET. It is shown that a large gate-drain capacitance is responsible for a transient pull-down of the
gate-source voltage at the passive switch during the turn-off of the active switch. Due to the changed
gate-source voltage, the reverse conduction characteristic changes. This leads to a significant turn-on
voltage undershoot at the passive switch. As a result, a higher turn-off drain-source voltage peak at the
active switch occurs. Due to the higher peak voltage of the active switch, the switching must be slowed
down. This paper shows the relationship of this effect in transient slopes and their relevance to the
design of the gate resistance. Furthermore, a solution to prevent a large gate-source pull-down is shown.
In addition, the static characteristics are compared to a state-of-the-art 1.2 kV SiC MOSFET.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > Zentrum für Energietechnik - ZET
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 21 Jul 2023 07:01
Last Modified: 21 Jul 2023 07:01