at Google ScholarTitle data
Bergmann, Lukas ; Wahle, Marcus ; Bakran, Mark-M.:
Investigation of SC faults in 3300 V SiC MOSFET based Half Bridge Submodules for HVDC Converters.
2023
Event: PCIM Europe 2023
, 09.05.-11.05.2023
, Nürnberg.
(Conference item: Conference
,
Speech with paper
)
Abstract in another language
The content of this work presents the failure robustness of 3.3 kV Silicon carbide (SiC) MOSFETs in the
use of Modular Multilevel Converter (MMC) half bridge submodules. The focus of investigation is on the
application specific short circuit (SC) failure types of HV SiC MOSFETs within a half bridge (HB) cell of a
HVDC MMC. First, various SC types are executed in a double pulse test setup to characterize the SC
behavior and the required save turn off conditions. A system loss simulation is executed to investigate the
influence of potential soft turnoff. The second part of this work will focus on system DC link SC failures
in a 3.3 kV SiC based HB submodule using the intrinsic bodydiodes of the devices. For this purpose,
surge current tests of discrete SiC MOSFETs were executed to investigate the maximum ratings. Finally,
a system simulation of a DC link SC failure with a fictive scaled SiC HB module is simulated to obtain the
stress on the body diode in the application.
Further data
| Item Type: | Conference item (Speech with paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > Zentrum für Energietechnik - ZET |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 21 Jul 2023 07:08 |
| Last Modified: | 21 Jul 2023 07:08 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/86226 |