at Google ScholarTitle data
Häring, Johannes ; Hepp, Maximilian ; Wondrak, Wolfgang ; Bakran, Mark-M.:
Switching Behaviour of a SiC-MOSFET 3-Level ANPC Inverter with Different Modulation Schemes.
2023
Event: PCIM Europe 2023
, 09.05.-11.05.2023
, Nürnberg.
(Conference item: Conference
,
Speech with paper
)
Abstract in another language
Wide band-gap devices are about to capture the power semiconductor market for electric vehicle applications
since efficiency and power density are becoming more and more important. To gain highest
efficiency in traction inverters, wide band-gap semiconductors can be used in 3-level structures. This
paper deals with the switching behaviour of SiC-MOSFETs in an ANPC inverter with different modulation
schemes by discussing switching processes of a scaled down experimental setup during operation. It
shows the influence of secondary effects depending on the modulation scheme like additional parasitic
turn-on losses, stray inductance in different commutation paths and the consequent loss distribution.
Further data
| Item Type: | Conference item (Speech with paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > Zentrum für Energietechnik - ZET |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 21 Jul 2023 07:27 |
| Last Modified: | 21 Jul 2023 07:27 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/86230 |