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Switching Behaviour of a SiC-MOSFET 3-Level ANPC Inverter with Different Modulation Schemes

Title data

Häring, Johannes ; Hepp, Maximilian ; Wondrak, Wolfgang ; Bakran, Mark-M.:
Switching Behaviour of a SiC-MOSFET 3-Level ANPC Inverter with Different Modulation Schemes.
Event: PCIM Europe 2023 , 09.05.-11.05.2023 , Nürnberg.
(Conference item: Conference , Speech with paper )

Abstract in another language

Wide band-gap devices are about to capture the power semiconductor market for electric vehicle applications
since efficiency and power density are becoming more and more important. To gain highest
efficiency in traction inverters, wide band-gap semiconductors can be used in 3-level structures. This
paper deals with the switching behaviour of SiC-MOSFETs in an ANPC inverter with different modulation
schemes by discussing switching processes of a scaled down experimental setup during operation. It
shows the influence of secondary effects depending on the modulation scheme like additional parasitic
turn-on losses, stray inductance in different commutation paths and the consequent loss distribution.

Further data

Item Type: Conference item (Speech with paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > Zentrum für Energietechnik - ZET
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 21 Jul 2023 07:27
Last Modified: 21 Jul 2023 07:27