at Google ScholarTitle data
Nehmer, Dominik ; Hepp, Maximilian ; Wondrak, Wolfgang ; Bakran, Mark-M.:
A Comparison of GaN HEMT and SiC MOSFET Power Inverter Modules for Electric Vehicles (EV).
2023
Event: PCIM Europe 2023
, 09.05.-11.05.2023
, Nürnberg.
(Conference item: Conference
,
Paper
)
Abstract in another language
In this paper, two GaN HEMTs and a SiC MOSFET device are compared in a virtual power module for
inverters of electric vehicles (EV). Therefore scaled double pulse measurements are performed. The
thermal environment of the module is taken into account in the calculations. Finally, the maximum current
density, the required die areas, and the efficiency in the WLTP cycle are compared. GaN HEMTs reach
nearly the same efficiency in the WLTP cycle as the SiC MOSFET and hence will be a good alternative for
inverters in EV.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > Zentrum für Energietechnik - ZET |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 21 Jul 2023 07:29 |
| Last Modified: | 21 Jul 2023 07:29 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/86231 |