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Impact of Operating a SiC-MOSFETs Body Diode Beyond its SOA

Title data

Rauh, Michael ; März, Andreas ; Schönewolf, Stefan ; Bakran, Mark-M.:
Impact of Operating a SiC-MOSFETs Body Diode Beyond its SOA.
Event: PCIM Europe 2023 , 09.05.-11.05.2023 , Nürnberg.
(Conference item: Conference , Speech with paper )

Abstract in another language

To lower the switching-losses of SiC-Power-MOSFETs in a half-bridge setup, the switching speed can
be maximized by using dead-time-optimization. Due to a short dead-time, the reverse recovery current
after the interlock period between both switches is minimized, and therefore, the overvoltage during the
diode turn-off is lowered. However, if the driver fails to meet the required dead-time, the overvoltage
across the diode increases. In the worst case, the body diode will be operated under avalanche conditions
due to high switching stress. This paper investigates the influence of repetitive avalanche stress on a
SiC-Power-MOSFET’s body diode concerning possible degradation of the semiconductor.

Further data

Item Type: Conference item (Speech with paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > Zentrum für Energietechnik - ZET
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 21 Jul 2023 07:32
Last Modified: 21 Jul 2023 07:32