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Junction Temperature Measurement Based on the Internal Gate Resistance for a Wide Range of Power Semiconductors

Title data

Gleißner, Michael ; Nehmer, Dominik ; Bakran, Mark-M.:
Junction Temperature Measurement Based on the Internal Gate Resistance for a Wide Range of Power Semiconductors.
In: IEEE Open Journal of Power Electronics. Vol. 4 (2023) . - pp. 293-305.
ISSN 2644-1314

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Abstract in another language

This paper presents research results on the junction temperature measurement via the internal gate resistance in converter operation for IGBTs and its applicability to other types of active power semiconductors. A junction temperature monitor has been developed to determine the value of the temperature-dependent internal gate resistance by using a sinusoidal voltage superimposed on the gate voltage at the resonance frequency. The device enables a simple and robust junction temperature measurement in inverter operation, which is in excellent agreement with an infrared reference measurement. The method's applicability to semiconductors other than Si-IGBTs, such as SiC-MOSFETs, JFETs, and GaN devices, is verified by gate impedance measurements using a network analyzer. The gate impedance's quality factor is decisive. Other temperature-sensitive electrical parameters (TSEPs) related to the switching behavior depend on the internal gate resistance. Therefore, the findings presented are relevant for many junction temperature measurement methods.

Further data

Item Type: Article in a journal
Refereed: Yes
Keywords: Junction temperature; semiconductor device measurements; silicon carbide devices; temperature measurement; temperature-sensitive electrical parameters; wide-band-gap devices.
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > Zentrum für Energietechnik - ZET
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Mechatronics
Profile Fields
Profile Fields > Advanced Fields
Profile Fields > Emerging Fields
Research Institutions
Research Institutions > Research Units
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 29 Aug 2023 06:03
Last Modified: 18 Mar 2024 09:40