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Effect of Dynamic Gate Control Driver on SiC MOSFET Power Module Performance in WLTC

Title data

Frank, Michael ; Bakran, Mark-M.:
Effect of Dynamic Gate Control Driver on SiC MOSFET Power Module Performance in WLTC.
Event: 25th European Conference on Power Electronics and Applications (EPE 2023) , 04.-08.09.2023 , Aalborg, Dänemark.
(Conference item: Conference , Paper )

Abstract in another language

This paper investigates the impact of dynamic gate control on the total losses of a SiC MOSFET power module under Worldwide Harmonized Light Duty Test Cycle (WLTC) Class 3 operating conditions. A time domain-based simulation model is developed for the traction inverter of an electric vehicle (EV) considering temperaturedependent losses and thermal feedback for enhanced accuracy. The study simulates the WLTC using experimental measurement data, allowing examination of various gate driver and sensory configurations, as well as different power module utilisation levels. It is found that due to predominantly partial load conditions in WLTC, the application of a dynamic gate driver can significantly reduce losses - yielding savings between 27 % and 47 % in switching losses and 17 % to 37 % in total inverter losses, depending on the available sensory information, power module utilisation, and gate driver design.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > Zentrum für Energietechnik - ZET
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Mechatronics
Profile Fields
Profile Fields > Advanced Fields
Profile Fields > Emerging Fields
Research Institutions
Research Institutions > Research Units
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 10 Oct 2023 08:11
Last Modified: 10 Jul 2024 08:46