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Effect of Dynamic Gate Control Driver on SiC MOSFET Power Module Performance in WLTC

Title data

Frank, Michael ; Bakran, Mark-M.:
Effect of Dynamic Gate Control Driver on SiC MOSFET Power Module Performance in WLTC.
Event: 25th European Conference on Power Electronics and Applications (EPE 2023) , 04.-08.09.2023 , Aalborg, Dänemark.
(Conference item: Conference , Paper )

Abstract in another language

This paper investigates the impact of dynamic
gate control on the total losses of a SiC MOSFET
power module under Worldwide Harmonized
Light Duty Test Cycle (WLTC) Class 3 operating
conditions. A time domain-based simulation
model is developed for the traction inverter of an
electric vehicle (EV) considering temperaturedependent
losses and thermal feedback for
enhanced accuracy. The study simulates the
WLTC using experimental measurement data,
allowing examination of various gate driver and
sensory configurations, as well as different power
module utilisation levels. It is found that due to
predominantly partial load conditions in WLTC,
the application of a dynamic gate driver can
significantly reduce losses - yielding savings
between 27 % and 47 % in switching losses and
17 % to 37 % in total inverter losses, depending
on the available sensory information, power
module utilisation, and gate driver design.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > Zentrum für Energietechnik - ZET
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 10 Oct 2023 08:11
Last Modified: 10 Oct 2023 08:11