at Google ScholarTitle data
Rauh, Michael ; Bürger, Matthias ; Bakran, Mark-M.:
Paralleling SiC-Power-MOSFET Body Diodes under Harsh Switching Conditions.
2024
Event: PCIM Europe 2024
, 11.-13.06.2024
, Nürnberg.
(Conference item: Conference
,
Paper
)
Abstract in another language
To reduce switching losses of SiC-Power-MOSFETs, one approach is to maximize the switching speed
by using dead-time optimization. However, if the driver fails to meet the required dead-time, the body
diode may be operated under avalanche conditions due to high switching stress. Since power modules
consist of numerous semiconductors operating in parallel, the energy distribution between the separate
devices during a possible avalanche event of the body diodes has to be taken into consideration, which
will be addressed in this paper. The main focus is the parallel operation of semiconductors with different
breakdown voltages under avalanche conditions due to high switching stress as well as the impact of the
inductive coupling among the parallel devices during avalanche operation.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > Zentrum für Energietechnik - ZET |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 13 Sep 2024 07:55 |
| Last Modified: | 13 Sep 2024 07:55 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/90399 |