at Google ScholarTitle data
Gleißner, Michael ; Soller, Florian ; Bakran, Mark-M.:
Applicability of thermal impedance spectroscopy via gate voltage variation
for IGBTs and SiC MOSFETs.
2024
Event: ECCE Europe 2024
, 02.09.-06.09.2024
, Darmstadt.
(Conference item: Conference
,
Paper
)
DOI: https://doi.org/10.1109/ECCEEurope62508.2024.10751962
Abstract in another language
This article investigates which junction temperature swings arise from minimal sinusoidal superposition of the gate voltage in the on-state for IGBT and SiC MOSFET semiconductors. For this purpose, a simulation model is created based on extensive curve tracer measurements and validated by temperature measurements with different types of sensors in a laboratory experiment. The thermal impedance can be determined by temperature swings at different frequencies. Based on these findings, the feasibility of degradation detection during load cycles is investigated.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Keywords: | junction temperature; temperature measurement; semiconductor device measurements; impedance spectroscopy; degradation diagnosis |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > Zentrum für Energietechnik - ZET |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 22 Nov 2024 06:30 |
| Last Modified: | 22 Nov 2024 06:30 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/91226 |