at Google ScholarTitle data
Frank, Michael ; Bakran, Mark-M.:
An Active Gate Driver to Enhance SiC-MOS Performance Utilising a Controlled Parasitic Turn-On Effect.
2025
Event: PCIM Conference 2025
, 06.05.-08.05.2025
, Nürnberg.
(Conference item: Conference
,
Paper
)
DOI: https://doi.org/10.30420/566541060
Abstract in another language
Parasitic Turn-On (PTO) has been shown to slow the passive diode’s recovery speed, thereby enabling a
reduction in gate resistance during turn-on of the complementary active switch. This reduction decreases
the combined active turn-on and passive diode turn-off switching losses. This paper quantitatively
evaluates this phenomenon and further demonstrates how Active Gate Drivers (AGDs) applied to the
passive switch can enhance the performance through a switching-current-dependent control strategy. The
proposed approach utilises the conventional negative gate driving voltage at low switching currents until
the diode turn-off overvoltage approaches its permissible limit. For higher switching currents, the strategy
transitions to a less negative gate driving voltage, intentionally triggering PTO. This mechanism reduces
the reverse recovery current gradient, mitigates overvoltage, and enables the use of lower gate resistance
during turn-on, thereby minimising total switching losses compared to traditional methods. The achievable
switching loss reductions are calculated for various scenarios during an electric vehicle driving cycle.
Furthermore, this work explores multiple AGD topologies capable of generating the required negative
gate voltages.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > Zentrum für Energietechnik - ZET |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 17 Jul 2025 06:48 |
| Last Modified: | 17 Jul 2025 06:48 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/94209 |