at Google ScholarTitle data
Frank, Michael:
Analysis of Efficiency Improvements Achievable with Active Gate Drivers for SiC MOSFETs Using a Common Switching-Loss Figure of Merit.
2025
Event: ECCE Europe 2025
, 31.08.25-04.09.2025
, Birmingham.
(Conference item: Conference
,
Paper
)
Abstract in another language
Numerous Active Gate Driver (AGD) topologies have been reported in the literature. As each option addresses a different application space, designers often struggle to select the most appropriate solution. This paper therefore introduces an Active Gate Driver Figure of Merit (AGD-FOM) that quantifies the switching-loss reduction achievable over the full driving cycle of an electric vehicle, thereby enabling a systematic comparison of competing AGDs. The AGD-FOM is evaluated for several SiC MOSFET AGD concepts using both measured and intrinsic channel switching-loss data. The study shows that even comparatively simple AGDs can already harvest a large share of the theoretically attainable switching-loss reduction, especially at turn-off. Moreover, the results underline that intrinsic channel switching losses must be considered to obtain a fair and meaningful assessment of AGD performance.
Index Terms—Active Gate Driver, SiC MOSFET, Power Converters
for EV, Driver concepts, Switching losses, Control Strategy
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > Zentrum für Energietechnik - ZET |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 01 Dec 2025 14:39 |
| Last Modified: | 01 Dec 2025 14:39 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/95358 |