at Google ScholarTitle data
Hüttner, Hannes:
Aufbau und Inbetriebnahme eines Versuchsstandes und Charakterisierung der Gate-Lebensdauer von SiC-MOSFETs.
Bayreuth
,
2026
(Master's,
2026, Universität Bayreuth, Fakultät für Ingenieurwissenschaften, Lehrstuhl für Mechatronik)
Further data
| Item Type: | Master's, Magister, Diploma, or Admission thesis (Master's) |
|---|---|
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > Zentrum für Energietechnik - ZET |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 30 Jun 2026 05:52 |
| Last Modified: | 30 Jun 2026 05:52 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/98916 |