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Differences in dimensioning SiC MOSFETs and Si IGBTs for Traction Inverters

Title data

Kestler, Tobias ; Damec, Vladislav ; Bakran, Mark-M.:
Differences in dimensioning SiC MOSFETs and Si IGBTs for Traction Inverters.
2018
Event: EPE 2018 : 20th European Conference on Power Electronics and Applications , 17.09.-21.09.2018 , Riga, Lettland.
(Conference item: Conference , Paper )

Official URL: Volltext

Abstract in another language

This paper describes, how the dimensioning of SiC MOSFETs and Si IGBTs for light railway differs in
various aspects due to their specific electrical and thermal properties. Instead of comparing IGBT and
SiC modules with the same nominal current, the output current during a load cycle is scaled to identify
the maximum output capability for a given power cycling lifetime. Furthermore, it is shown which
specific properties of the SiC MOSFET lead to the significantly increased current density in comparison
to Si IGBT modules.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Faculties
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Mechatronics
Profile Fields
Profile Fields > Advanced Fields
Profile Fields > Emerging Fields
Research Institutions
Research Institutions > Research Units
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 13 Nov 2018 09:14
Last Modified: 13 Nov 2018 09:19
URI: https://eref.uni-bayreuth.de/id/eprint/46299