Differences in dimensioning SiC MOSFETs and Si IGBTs for Traction Inverters

Titelangaben

Kestler, Tobias ; Damec, Vladislav ; Bakran, Mark-M.:
Differences in dimensioning SiC MOSFETs and Si IGBTs for Traction Inverters.
2018
Veranstaltung: EPE 2018 : 20th European Conference on Power Electronics and Applications , 17.09.-21.09.2018 , Riga, Lettland.
(Veranstaltungsbeitrag: Kongress/Konferenz/Symposium/Tagung , Paper )

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Abstract

This paper describes, how the dimensioning of SiC MOSFETs and Si IGBTs for light railway differs in
various aspects due to their specific electrical and thermal properties. Instead of comparing IGBT and
SiC modules with the same nominal current, the output current during a load cycle is scaled to identify
the maximum output capability for a given power cycling lifetime. Furthermore, it is shown which
specific properties of the SiC MOSFET lead to the significantly increased current density in comparison
to Si IGBT modules.