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Switching SiC MOSFETs under conditions of a high power module

Title data

Maier, Robert ; Bakran, Mark-M.:
Switching SiC MOSFETs under conditions of a high power module.
2018
Event: EPE 2018 : 20th European Conference on Power Electronics and Applications , 17.09.-21.09.2018 , Riga, Lettland.
(Conference item: Conference , Paper )

Official URL: Volltext

Abstract in another language

This paper discusses the investigation of SiC MOSFET switching characteristic in high inductive environment.
The characteristic product of stray-inductance times nominal current grows with the power
rating and is a limiting factor for the speed of current commutation. The reduction of switching speed
due to this limit and its impact on switching performance is evaluated. Furthermore this paper proposes
a, according to the author’s knowledge, novel benchmark for characterisation and comparison of SiC
MOSFET switching behaviour.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Faculties
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Mechatronics
Profile Fields
Profile Fields > Advanced Fields
Profile Fields > Emerging Fields
Research Institutions
Research Institutions > Research Units
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 13 Nov 2018 09:17
Last Modified: 13 Nov 2018 09:17
URI: https://eref.uni-bayreuth.de/id/eprint/46300