Switching SiC MOSFETs under conditions of a high power module

Titelangaben

Maier, Robert ; Bakran, Mark-M.:
Switching SiC MOSFETs under conditions of a high power module.
2018
Veranstaltung: EPE 2018 : 20th European Conference on Power Electronics and Applications , 17.09.-21.09.2018 , Riga, Lettland.
(Veranstaltungsbeitrag: Kongress/Konferenz/Symposium/Tagung , Paper )

Volltext

Link zum Volltext (externe URL):

Abstract

This paper discusses the investigation of SiC MOSFET switching characteristic in high inductive environment.
The characteristic product of stray-inductance times nominal current grows with the power
rating and is a limiting factor for the speed of current commutation. The reduction of switching speed
due to this limit and its impact on switching performance is evaluated. Furthermore this paper proposes
a, according to the author’s knowledge, novel benchmark for characterisation and comparison of SiC
MOSFET switching behaviour.