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Junction Temperature Measurement of SiC MOSFETs : Straightforward as it seems?

Title data

Kestler, Tobias ; Bakran, Mark-M.:
Junction Temperature Measurement of SiC MOSFETs : Straightforward as it seems?
2018
Event: PCIM Europe 2018 , 05.06.-07.06.2018 , Nürnberg, Deutschland.
(Conference item: Conference , Paper )

Abstract in another language

Reliable measurement of the junction temperature
Tj is essential for the application of power semiconductors.
Similar to the IGBT’s Vce-method, for SiC
MOSFETs the voltage drop over the body diode can
be used for Tj acquisition. This method is validated
for different devices with consideration of the gate
voltage’s and measuring current’s influence. Furthermore,
the applicability of the Rgi-method, which
also works in switching operation and utilizes the
temperature coefficient of the internal gate resistance,
is evaluated for SiC MOSFETS.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Faculties
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Mechatronics
Profile Fields
Profile Fields > Advanced Fields
Profile Fields > Emerging Fields
Research Institutions
Research Institutions > Research Units
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 13 Nov 2018 10:00
Last Modified: 13 Nov 2018 10:00
URI: https://eref.uni-bayreuth.de/id/eprint/46308