Titlebar

Export bibliographic data
Literature by the same author
plus on the publication server
plus at Google Scholar

 

Influence of the Threshold Voltage Hysteresis and the Drain Induced Barrier Lowering on the Dynamic Transfer Characteristic of SiC Power MOSFETs

Title data

Hofstetter, Patrick ; Maier, Robert ; Bakran, Mark-M.:
Influence of the Threshold Voltage Hysteresis and the Drain Induced Barrier Lowering on the Dynamic Transfer Characteristic of SiC Power MOSFETs.
2019
Event: APEC 2019 , 17.03.-21.03.2019 , Anaheim, USA.
(Conference item: Conference , Paper )

Abstract in another language

This paper focuses on dynamic transfer characteristics of SiC MOSFETs, which are derived from the actual switching operation and are different from the usual static characteristics. A new approach to measure the parasitic common source elements is shown, using a non-harmful short circuit pulse. This is important for the correction of the measured gate source voltage, especially in packages without Kelvin source. The resulting transfer characteristics show the threshold voltage hysteresis of SiC MOSFETs and additionally the interaction with the drain induced barrier lowering (DIBL) effect. Finally, the effect of different off-state times on the transfer characteristics and the turn-on process is shown.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 13 Jun 2019 07:01
Last Modified: 13 Jun 2019 07:01
URI: https://eref.uni-bayreuth.de/id/eprint/49480