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A Quad-Core 60 GHz Push-Push 45 nm SOI CMOS VCO with -101.7 dBc/Hz Phase Noise at 1 MHz offset, 19 % Continuous FTR and -187 dBc/Hz FoMT

Title data

Rimmelspacher, Johannes ; Weigel, Robert ; Hagelauer, Amelie ; Issakov, Vadim:
A Quad-Core 60 GHz Push-Push 45 nm SOI CMOS VCO with -101.7 dBc/Hz Phase Noise at 1 MHz offset, 19 % Continuous FTR and -187 dBc/Hz FoMT.
In: European Solid-State Circuits Conference : Proceedings. - Dresden, Germany , 2018 . - pp. 138-141
ISBN 978-1-5386-5404-0
DOI: https://doi.org/10.1109/ESSCIRC.2018.8494241

Abstract in another language

This paper presents a 60 GHz Quad-Core push-push VCO in 45 nm partially depleted Silicon-on-Insulator (SOI) CMOS. The measured phase noise (PN) at 60.5 GHz is −101.7 dB/Hz at 1 MHz offset from carrier. The continuous frequency-tuning range (FTR) is 19 . The Quad-Core VCO consumes only 40 mW DC power. The complete circuit including fundamental and second harmonic (H2) output buffers draws 110 mA from a single 1 V supply. The VCO cores are coupled via resonant-tank transformers. A similar transformer-coupled Dual-Core VCO is fabricated and measured to prove the relative PN improvement between Dual-Core and Quad-Core topology. The total area of the Quad-Core VCO excluding pads is 0.1 mm²

Further data

Item Type: Article in a book
Refereed: Yes
Keywords: millimeter-wave; wideband; silicon-on-insulator; CMOS technology; System-on-Chip
Institutions of the University: Faculties > Faculty of Engineering Science > >
Result of work at the UBT: No
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 18 Oct 2019 07:09
Last Modified: 18 Oct 2019 07:09
URI: https://eref.uni-bayreuth.de/id/eprint/52549